Thomas T Hwang

Title: Innovations of Thomas T. Hwang in Integrated Circuit Technology

Introduction

Thomas T. Hwang, an accomplished inventor based in Wappingers Falls, NY, has made significant contributions to the field of integrated circuit technology. With a total of three patents to his name, his work focuses on enhancing the performance and reliability of gate dielectrics.

Latest Patents

Hwang's latest inventions include:

1. **Nitrided Ultra Thin Gate Dielectrics** - This patent presents a method for forming a gate dielectric for integrated circuit devices. It involves creating an initial oxynitride layer on a substrate material, followed by a plasma nitridation process that optimizes the final physical thickness of the oxynitride layer.

2. **Method for Improved Plasma Nitridation of Ultra Thin Gate Dielectrics** - Similar to the first, this patent details a refined method for forming a gate dielectric for integrated circuits. It also centers on the formation of an oxynitride layer and the effectiveness of plasma nitridation to achieve desired thickness.

Career Highlights

Thomas T. Hwang is currently employed at the renowned International Business Machines Corporation (IBM), a leading technology company known for its innovation and research in various fields, including computer hardware and software.

Collaborations

Throughout his career, Hwang has collaborated with esteemed colleagues, including Mukesh Vijay Khare and Christopher Peter D'Emic. Together, they have contributed to advancements in integrated circuit technologies, showcasing the power of teamwork in driving innovation.

Conclusion

Thomas T. Hwang is a notable figure in the realm of integrated circuit inventions. His patents not only showcase his technical acumen but also indicate a commitment to improving the functionality and efficiency of electronic devices. His ongoing work at IBM and collaborations with fellow inventors are sure to lead to even more groundbreaking advancements in the future.