The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Mar. 15, 2001
Mukesh V. Khare, White Plains, NY (US);
Christopher P. D'emic, Ossining, NY (US);
Thomas T. Hwang, Wappingers Falls, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
James J. Quinlivan, Essex Junction, VT (US);
Beth A. Ward, Essex Junction, VT (US);
Mukesh V. Khare, White Plains, NY (US);
Christopher P. D'Emic, Ossining, NY (US);
Thomas T. Hwang, Wappingers Falls, NY (US);
Paul C. Jamison, Hopewell Junction, NY (US);
James J. Quinlivan, Essex Junction, VT (US);
Beth A. Ward, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.