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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

James J Quinlivan

USPTO Granted Patents = 13 

Average Co-Inventor Count = 5.9

ph-index = 5

Forward Citations = 84(Granted Patents)


Company Filing History:

goldMedal13 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2002-2014

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13 patents (USPTO):
1. 8709887 - Method for fabricating a nitrided silicon-oxide gate dielectric (2014-04-29),
2. 7759260 - Selective nitridation of gate oxides (2010-07-20),
3. 7714366 - CMOS transistor with a polysilicon gate electrode having varying grain size (2010-05-11),
4. 7291568 - Method for fabricating a nitrided silicon-oxide gate dielectric (2007-11-06),
5. 7138691 - Selective nitridation of gate oxides (2006-11-21),
6. 7109559 - Nitrided ultra thin gate dielectrics (2006-09-19),
7. 6967167 - Silicon dioxide removing method (2005-11-22),
8. 6909157 - Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors (2005-06-21),
9. 6893979 - Method for improved plasma nitridation of ultra thin gate dielectrics (2005-05-17),
10. 6893948 - Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size (2005-05-17),
11. 6706644 - Thermal nitrogen distribution method to improve uniformity of highly doped ultra-thin gate capacitors (2004-03-16),
12. 6670263 - Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon of varying grain size (2003-12-30),
13. 6417070 - Method for forming a liner in a trench (2002-07-09),

Title: The Innovations of James J Quinlivan in Semiconductor Technology

Introduction: James J Quinlivan is a prolific inventor based in Essex Junction, VT, with a remarkable portfolio of 13 patents in the field of semiconductor technology. His groundbreaking work has significantly contributed to the advancement of MOSFET fabrication processes.

Latest Patents:

1. Method for fabricating a nitrided silicon-oxide gate dielectric: Quinlivan's method involves converting a silicon dioxide layer into a silicon oxynitride layer through plasma nitridation in a reducing atmosphere. This dielectric layer is crucial for the production of high-performance MOSFETs.

2. Selective nitridation of gate oxides: By introducing varying amounts of nitrogen into different features of semiconductor structures, Quinlivan has developed a method to enhance the performance and functionality of active devices.

Career Highlights: Quinlivan is a valuable asset to the prestigious International Business Machines Corporation (IBM), where his expertise and innovative thinking have flourished. His knack for pushing boundaries and exploring new possibilities has earned him recognition within the industry.

Collaborations: Throughout his career, Quinlivan has collaborated with notable peers such as Beth A Ward and James Spiros Nakos. Together, they have worked on cutting-edge projects that have redefined the semiconductor landscape.

Conclusion: James J Quinlivan's dedication to innovation and his impactful contributions to semiconductor technology underscore his status as a visionary inventor. His patents and collaborations serve as testaments to his ingenuity and commitment to advancing the field.

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