The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Aug. 16, 2006
Applicants:

Jay S Burnham, Franklin, VT (US);

John J Ellis-monaghan, Grand Isle, VT (US);

James S Nakos, Essex Junction, VT (US);

James J Quinlivan, Essex Junction, VT (US);

Inventors:

Jay S Burnham, Franklin, VT (US);

John J Ellis-Monaghan, Grand Isle, VT (US);

James S Nakos, Essex Junction, VT (US);

James J Quinlivan, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/38 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitrogen into the second feature of the second active device, the second amount of nitrogen being different from the first amount of nitrogen.


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