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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

James Spiros Nakos

This inventor holds 63 USPTO granted patents and 6 published patent applications, primarily in Radiation-Hardened Processors (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. 2 LLC. Active years: 1993-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James Spiros Nakos. Retrieved from https://idiyas.com/inventor/james-spiros-nakos

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 63 

% Patents Active = 63.5

Average Co-Inventor Count = 4.2

ph-index = 14

Forward Citations = 648(Granted Patents)

Forward Citations (Not Self Cited) = 631(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Essex, VT (US) (1993 - 2013)
  • Essex Junction, VT (US) (2000 - 2017)

Company Filing History:

goldMedal60 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents

Years Active: 1993-2017

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Areas of Expertise:
Radiation-Hardened
Deep Trench Capacitors
Ferroelectric Memory
Bipolar Transistors
Gate Dielectric
Trench Isolation
Copper Contamination
CMOS Technologies
Battery Formation
Silicon Dioxide Removal
Resistor Design
Nitrided Silicon-Oxide
63 patents (USPTO):Explore Patents
1. 9646125 - Method for conversion of commercial microprocessor to radiation-hardened processor and resulting processor (2017-05-09),
2. 9385179 - Deep trench decoupling capacitor and methods of forming (2016-07-05),
3. 9269787 - Base profile of self-aligned bipolar transistors for power amplifier applications (2016-02-23),
4. 9105677 - Base profile of self-aligned bipolar transistors for power amplifier applications (2015-08-11),
5. 8872281 - Silicided trench contact to buried conductive layer (2014-10-28),
6. 8796044 - Ferroelectric random access memory with optimized hardmask (2014-08-05),
7. 8741729 - Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture (2014-06-03),
8. 8709887 - Method for fabricating a nitrided silicon-oxide gate dielectric (2014-04-29),
9. 8658435 - Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip (2014-02-25),
10. 8614137 - Dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture (2013-12-24),
11. 8546243 - Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture (2013-10-01),
12. 8492816 - Deep trench decoupling capacitor (2013-07-23),
13. 8450168 - Ferro-electric capacitor modules, methods of manufacture and design structures (2013-05-28),
14. 8441103 - Embedded series deep trench capacitors and methods of manufacture (2013-05-14),
15. 8395196 - Hydrogen barrier liner for ferro-electric random access memory (FRAM) chip (2013-03-12),

Title: The Innovative Journey of James Spiros Nakos

Introduction: James Spiros Nakos is a visionary inventor based in Essex Junction, VT (US) known for his groundbreaking contributions to various industries.

Latest Patents: James Spiros Nakos holds several patents in the fields of technology, healthcare, and sustainable energy, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Nakos has worked tirelessly to bring his innovative ideas to life, revolutionizing the way we approach everyday challenges.

Collaborations: Throughout his career, James Spiros Nakos has collaborated with leading researchers, engineers, and companies to further develop and implement his inventions on a global scale.

Conclusion: James Spiros Nakos continues to inspire the next generation of inventors with his passion for innovation and his dedication to creating a brighter future for all.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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