The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2013
Filed:
Feb. 11, 2011
Timothy W. Kemerer, Essex Junction, VT (US);
James S. Nakos, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Timothy W. Kemerer, Essex Junction, VT (US);
James S. Nakos, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention relates to a semiconductor structures and methods of manufacture and, more particularly, to a dual contact trench resistor in shallow trench isolation (STI) and methods of manufacture. In a first aspect of the invention, a method comprises forming a trench in a substrate; forming a first insulator layer within the trench; forming a first electrode within the trench, on the first insulator layer, and isolated from the substrate by the first insulator layer; forming a second insulator layer within the trench and on the first electrode; and forming a second electrode within the trench, on the second insulator layer, and isolated from the substrate by the first insulator layer and the second insulator layer.