The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

May. 24, 2011
Applicants:

Timothy W. Kemerer, Essex Junction, VT (US);

James S. Nakos, Essex Junction, VT (US);

Steven M. Shank, Jericho, VT (US);

Inventors:

Timothy W. Kemerer, Essex Junction, VT (US);

James S. Nakos, Essex Junction, VT (US);

Steven M. Shank, Jericho, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.


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