The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Jan. 23, 2013
International Business Machines Corporation, Armonk, NY (US);
Brian M. Czabaj, Essex Junction, VT (US);
James V. Hart, III, Washington, VT (US);
William J. Murphy, North Ferrisburgh, VT (US);
James S. Nakos, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a hydrogen barrier liner for a ferro-electric random access memory chip including forming a first dielectric layer over a substrate; forming a gate over the first dielectric layer; forming a first aluminum oxide layer over the gate and the first dielectric layer; forming a second dielectric layer over the first aluminum oxide layer; etching a trench through the second dielectric layer and the first aluminum oxide layer to the gate; forming a hydrogen barrier liner over the second dielectric layer, the hydrogen barrier liner lining the trench and contacting the gate; forming a silicon dioxide layer over the first aluminum dioxide layer, the silicon dioxide layer substantially filling the trench; and substantially removing the silicon dioxide layer leaving a silicon dioxide plug in the trench.