Washington, VT, United States of America

James V Hart, Iii


Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 34(Granted Patents)


Location History:

  • Barre, VT (US) (2001 - 2008)
  • Washington, VT (US) (2013 - 2014)

Company Filing History:


Years Active: 2001-2014

where 'Filed Patents' based on already Granted Patents

4 patents (USPTO):

Title: James V Hart, III: Innovator in Memory Technology

Introduction

James V Hart, III is a notable inventor based in Washington, VT (US). He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work primarily focuses on advancements in ferro-electric random access memory (FRAM) chips.

Latest Patents

One of his latest patents is a method for forming a hydrogen barrier liner for a ferro-electric random access memory chip. This innovative method includes several steps, such as forming a first dielectric layer over a substrate and creating a gate over this layer. Additionally, it involves forming a first aluminum oxide layer over the gate and the first dielectric layer, followed by a second dielectric layer. The process includes etching a trench through the second dielectric layer and the first aluminum oxide layer to the gate, and forming a hydrogen barrier liner that lines the trench and contacts the gate. The final steps involve forming a silicon dioxide layer that fills the trench and removing excess material to leave a silicon dioxide plug.

Another patent by Hart focuses on the design of a ferro-electric random access memory chip itself. This chip includes a substrate, a first dielectric layer, a gate, and a first aluminum oxide layer, among other components. The design also features a trench and a hydrogen barrier liner, ensuring the chip's efficiency and performance.

Career Highlights

James V Hart, III is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of FRAM chips, which are crucial for various electronic applications.

Collaborations

Throughout his career, Hart has collaborated with several talented individuals, including Brian M Czabaj and William Joseph Murphy. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

James V Hart, III is a prominent figure in the field of memory technology, with a focus on ferro-electric random access memory chips. His innovative patents and contributions to IBM highlight his commitment to advancing technology in this area.

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