The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Sep. 02, 2003
Jay S. Burnham, East Fairfield, VT (US);
James S. Nakos, Essex Junction, VT (US);
James J. Quinlivan, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Deborah A. Tucker, Westford, VT (US);
Beth A. Ward, Essex Junction, VT (US);
Jay S. Burnham, East Fairfield, VT (US);
James S. Nakos, Essex Junction, VT (US);
James J. Quinlivan, Essex Junction, VT (US);
Steven M. Shank, Jericho, VT (US);
Deborah A. Tucker, Westford, VT (US);
Beth A. Ward, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.