The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2005
Filed:
Sep. 30, 2003
Peter J. Geiss, Underhill, VT (US);
Alvin J. Joseph, Williston, VT (US);
Xuefeng Liu, South Burlington, VT (US);
James S. Nakos, Essex Junction, VT (US);
James J. Quinlivan, Essex Junction, VT (US);
Peter J. Geiss, Underhill, VT (US);
Alvin J. Joseph, Williston, VT (US);
Xuefeng Liu, South Burlington, VT (US);
James S. Nakos, Essex Junction, VT (US);
James J. Quinlivan, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for removing silicon dioxide residuals is disclosed. The method includes reacting a portion of a silicon dioxide layer (i.e., oxide) to form a reaction product layer, removing the reaction product layer and annealing in an environment to remove oxide residuals. The method finds application in a variety of semiconductor fabrication processes including, for example, fabrication of a vertical HBT or silicon-to-silicon interface without an oxide interface.