Underhill, VT, United States of America

Peter John Geiss

This inventor holds 25 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignee: International Business Machines Corporation. Active years: 1994-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peter John Geiss. Retrieved from https://idiyas.com/inventor/peter-john-geiss

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 60.0


Average Co-Inventor Count = 4.0

ph-index = 8

Forward Citations = 247(Granted Patents)


Company Filing History:


Years Active: 1994-2010

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Areas of Expertise:
BiCMOS Process
SiGe Transistor
Polysilicon Layer
Grain Size Control
Epitaxial Bipolar
Silicon Dioxide
Deep Trenches
Blocked Silicide Resistor
Reliability Improvements
Dislocation Suppression
Porous Silicon Structures
25 patents (USPTO):Explore Patents

Title: Innovations and Achievements of Peter John Geiss

Introduction: Peter John Geiss, based in Underhill, Vermont, is a prolific inventor with an impressive portfolio of 25 patents. His work focuses primarily on advancements in semiconductor technology, making significant contributions to the field through innovative methods and processes.

Latest Patents: Geiss's latest patents include a breakthrough method of controlling grain size in polysilicon layers and semiconductor devices. This innovative method involves forming a layer of polysilicon on a substrate and performing ion implantation of a grain size modulating species. This technique allows for the adjustment of the average grain size post-anneal, enhancing device performance. Another significant contribution is his work on methods of base formation in a BiCMOS process, which enables the fabrication of heterojunction bipolar transistors with reduced base resistance. This entails the formation of a silicide atop the raised extrinsic base, streamlining the fabrication process.

Career Highlights: Geiss has achieved remarkable recognition in his career, particularly for his contributions while working at the International Business Machines Corporation (IBM). His expertise and innovative approaches have made substantial impacts on semiconductor processes, laying a foundation for future advancements in the industry.

Collaborations: Throughout his career, Peter Geiss has worked alongside esteemed colleagues such as Alvin Jose Joseph and Qizhi Liu. These collaborations have fostered mutual innovation and have been instrumental in driving forward the technical capabilities within their field.

Conclusion: Peter John Geiss stands out as a leading inventor in semiconductor technology, with a notable collection of patents that reflect his dedication to enhancing electronic device performance. His work at IBM and collaborative efforts with fellow innovators demonstrate his significant impact on the field, paving the way for future advancements in semiconductor manufacturing and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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