The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2004
Filed:
Jan. 25, 2001
Douglas Duane Coolbaugh, Essex Junction, VT (US);
Mark D. Dupuis, South Burilington, VT (US);
Matthew D. Gallagher, Burlington, VT (US);
Peter J. Geiss, Underhill, VT (US);
Brett A. Philips, Fairfax, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.