Company Filing History:
Years Active: 2003-2005
Title: The Innovations of Matthew D Gallagher
Introduction
Matthew D Gallagher is a notable inventor based in Burlington, VT (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of SiGe bipolar transistors. With a total of 3 patents to his name, Gallagher's work has had a considerable impact on the industry.
Latest Patents
One of Gallagher's latest patents is titled "STI pull-down to control SiGe facet growth." This invention involves a SiGe bipolar transistor that includes a semiconductor substrate with a collector and sub-collector region formed therein. The collector and sub-collector are situated between isolation regions present in the substrate. Each isolation region features a recessed surface and a non-recessed surface, which are created using lithography and etching techniques. A SiGe layer is formed on the substrate and the surfaces of each isolation region, incorporating polycrystalline Si regions and a SiGe base region. Additionally, a patterned insulator layer is established on the SiGe base region, with an emitter formed on this layer, making contact with the SiGe base region through an emitter window opening.
Career Highlights
Matthew D Gallagher is currently employed at International Business Machines Corporation (IBM). His work at IBM has allowed him to explore and innovate in the semiconductor field, contributing to advancements that enhance the performance and efficiency of electronic devices.
Collaborations
Gallagher has collaborated with notable colleagues such as Peter John Geiss and Douglas Duane Coolbaugh. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Matthew D Gallagher's contributions to semiconductor technology through his patents and work at IBM highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of electronic devices and semiconductor applications.