International Business Machines Corporation

Matthew D Gallagher

Peter John Geiss

Douglas Duane Coolbaugh

Mark D Dupuis

Brett A Philips

Arne Watson Ballantine

James William Adkisson

Kirk David Peterson

Glen L Miles

Shwu-Jen Jeng

Tina Jane Wagner

Jeffrey D Gilbert

Donna Kaye Johnson

Robb Allen Johnson

James J Toomey

A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

STI pull-down to control SiGe facet growth

Sti pull-down to control SiGe facet growth

A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.

Structure and method for formation of a blocked silicide resistor

Growing community of inventors

Burlington, VT, United States of America

Matthew D Gallagher