The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Sep. 21, 2004
Peter J. Geiss, Underhill, VT (US);
Peter B. Gray, Essex Junction, VT (US);
Alvin J. Joseph, Williston, VT (US);
Qizhi Liu, Essex Junction, VT (US);
Peter J. Geiss, Underhill, VT (US);
Peter B. Gray, Essex Junction, VT (US);
Alvin J. Joseph, Williston, VT (US);
Qizhi Liu, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A heterobipolar transistor (HBT) for high-speed BiCMOS applications is provided in which the collector resistance, Rc, is lowered by providing a buried refractory metal silicide layer underneath the shallow trench isolation region on the subcollector of the device. Specifically, the HBT of the present invention includes a substrate including at least a subcollector; a buried refractory metal silicide layer located on the subcollector; and a shallow trench isolation region located on a surface of the buried refractory metal silicide layer. The present invention also provides a method of fabricating such a HBT. The method includes forming a buried refractory metal silicide underneath the shallow trench isolation region on the subcollector of the device.