The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Jan. 22, 2004
Jay S. Burnham, Fletcher, VT (US);
John J. Ellis-monaghan, Grand Isle, VT (US);
James S. Nakos, Essex Junction, VT (US);
James J. Quinlivan, Essex Junction, VT (US);
Jay S. Burnham, Fletcher, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
James S. Nakos, Essex Junction, VT (US);
James J. Quinlivan, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes thin gate dielectrics that have been selectively nitrogen enriched. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, without appreciably degrading device performance. A lower concentration of nitrogen is introduced into pFET gate dielectrics than into nFET gate dielectrics. Nitridation may be accomplished selectively by various techniques, including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation and/or polysilicon implantation.