The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Feb. 16, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Domingo A. Ferrer, Fishkill, NY (US);
Kriteshwar K. Kohli, Fishkill, NY (US);
Siddarth A. Krishnan, Peekskill, NY (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Keith Kwong Hon Wong, Wappingers Fall, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 23/525 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 23/5228 (2013.01); H01L 27/11206 (2013.01); H01L 21/76886 (2013.01);
Abstract
A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.
Ferrer, Domingo. (2019). Modified tungsten silicon (U.S. Patent No. 10192822). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10192822
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile