The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jan. 11, 2010
Joseph F. Shepard, Jr., Hopewell Junction, NY (US);
Siddarth A. Krishnan, Hopewell Junction, NY (US);
Rishikesh Krishnan, Hopewell Junction, NY (US);
Michael P. Chudzik, Hopewell Junction, NY (US);
Joseph F. Shepard, Jr., Hopewell Junction, NY (US);
Siddarth A. Krishnan, Hopewell Junction, NY (US);
Rishikesh Krishnan, Hopewell Junction, NY (US);
Michael P. Chudzik, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of creating insulating layers on different semiconductor materials includes providing a substrate having disposed thereon a first material and a second material, the second material having a chemical composition different from the first material; non-epitaxially depositing a continuous sacrificial layer of approximately constant thickness onto the first material and the second material, and then converting the sacrificial layer into a layer consisting essentially of SiOwithout oxidizing more than 10 angstroms into the second material. A structure includes a silicon nitride film disposed conformally on a silicon layer and a silicon germanium layer; a SiOlayer is disposed on the silicon nitride film.