The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Jun. 21, 2011
Michael P. Chudzik, Danbury, CT (US);
Min Dai, Mahwah, NJ (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Shahab Siddiqui, White Plains, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Min Dai, Mahwah, NJ (US);
Joseph F. Shepard, Jr., Poughkeepsie, NY (US);
Shahab Siddiqui, White Plains, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A method of fabricating a silicon-containing oxide layer that includes providing a chemical oxide layer on a surface of a semiconductor substrate, removing the chemical oxide layer in an oxygen-free environment at a temperature of 1000° C. or greater to provide a bare surface of the semiconductor substrate, and introducing an oxygen-containing gas at a flow rate to the bare surface of the semiconductor substrate for a first time period at the temperature of 1000° C. The temperature is then reduced to room temperature during a second time period while maintaining the flow rate of the oxygen containing gas to provide a silicon-containing oxide layer having a thickness ranging from 0.5 Å to 10 Å.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile