Field effect transistors with reduced parasitic resistances and method

Abstract

Disclosed are methods of forming field effect transistor(s) (FET) and the resulting structures. Instead of forming the FET source/drain (S/D) regions during front end of the line (FEOL) processing, they are formed during middle of the line (MOL) processing through metal plug openings in an interlayer dielectric (ILD) layer. Processes used to form the S/D regions through the metal plug openings include S/D trench formation, epitaxial semiconductor material deposition, S/D dopant implantation and S/D dopant activation, followed by silicide and metal plug formation. Since the post-MOL processing thermal budget is low, the methods ensure reduced S/D dopant deactivation, reduced S/D strain reduction, and reduced S/D dopant diffusion and, thus, enable reduced S/D resistance, optimal strain engineering, and flexible junction control, respectively. Since the S/D regions are formed through the metal plug openings, the methods eliminate overlay errors that can lead to uncontacted or partially contacted S/D regions.