Meera S Mohan

Title: **Meera S. Mohan: Innovator in Semiconductor Technology**

Introduction

Meera S. Mohan is a distinguished inventor based in Mechanicville, NY, known for her groundbreaking contributions to the field of semiconductor technology. With one patent to her name, Meera has made significant strides in the development of field effect transistors (FETs) that promise to enhance the performance and efficiency of electronic devices.

Latest Patents

Meera's patent, titled "Field Effect Transistors with Reduced Parasitic Resistances and Method," introduces innovative methods for forming FETs and the resulting structures. The invention proposes an approach where the source and drain regions of the FETs are created during the middle of the line (MOL) processing phase, rather than during the front end of the line (FEOL) operations. This technique involves using metal plug openings in an interlayer dielectric (ILD) layer to establish the S/D regions through a series of processes such as trench formation, epitaxial semiconductor deposition, dopant implantation, and activation. Meera's method significantly reduces S/D resistance and enhances the overall efficiency of the transistors by minimizing overlay errors and ensuring optimal strain engineering and flexible junction control.

Career Highlights

Meera S. Mohan has established herself as a valuable member of GlobalFoundries Inc., where she leverages her expertise in semiconductor fabrication and design. Her innovative mindset and dedication to advancing technology have played a critical role in the company's ongoing success in the semiconductor industry.

Collaborations

Throughout her career, Meera has collaborated with esteemed colleagues such as Shishir K. Ray and Bharat V. Krishnan, fostering an environment of teamwork and shared vision in the pursuit of excellence in semiconductor innovations. Together, they work towards creating cutting-edge solutions that address the challenges faced by the electronics industry.

Conclusion

Meera S. Mohan's work in the field of field effect transistors exemplifies the importance of innovation in today's technological landscape. Her patent and ongoing efforts at GlobalFoundries Inc. not only showcase her technical skill but also contribute to the advancement of semiconductor technology, paving the way for more efficient and high-performance electronic devices.