The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jul. 11, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Bharat V. Krishnan, Mechanicville, NY (US);
Rinus Tek Po Lee, Ballston Spa, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Hyung Yoon Choi, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/67 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823842 (2013.01); H01L 21/28088 (2013.01); H01L 21/67063 (2013.01); H01L 21/82345 (2013.01); H01L 21/823857 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to multiple threshold voltage devices and methods of manufacture. The structure includes: a gate dielectric material; a gate material on the gate dielectric material, the gate material comprising different thickness in different regions each of which are structured for devices having a different Vt; and a workfunction material on the gate material.