The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
May. 13, 2013
Applicants:
Gauri V. Karve, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
Inventors:
Gauri V. Karve, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823807 (2013.01); H01L 21/823857 (2013.01); H01L 29/1054 (2013.01);
Abstract
An integrated circuit with devices having dielectric layers with different thicknesses. The dielectric layers include a high-k dielectric and some of the dielectric layers include an oxide layer that is formed from an oxidation process. Each device includes a layer including germanium or carbon located underneath the electrode stack of the device. A silicon cap layers is located over the layer including germanium or carbon.