The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
May. 19, 2017
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Guilderland, NY (US);
Srikanth Balaji Samavedam, Cohoes, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A static random access memory (SRAM) cell includes 1and 2fins disposed on a substrate. A 1pass gate transistor (1PG) is embedded in the 1fin. The 1PG has a source region and a drain region disposed over the 1and 2fins. A 1gate structure (1PG-G) is disposed over the 1fin and between the source and drain regions. The 1PG-G is electrically connected to a 1word line. A 2pass gate transistor (2PG) is embedded in the 2fin. The 2PG has the same source and drain regions. A 2gate structure (2PG-G) is disposed over the 2fin and between the source and drain regions. The 2PG-G is electrically connected to a 2word line. A 1CT pillar is disposed between the 1PG-G and 2PG-G.