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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11127818 B1

PDFFull Text
Date of Patent:
Sep. 21, 2021

Filed:

Jul. 30, 2019

High voltage transistor with fin source/drain regions and trench gate structure

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Jagar Singh, Clifton Park, NY (US);

Srikanth Balaji Samavedam, Cohoes, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:

Hoffman Warnick LLC

Primary Examiner:

Jay C Chang

Assistant Examiner:

Mikka Liu

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/4236 (2013.01);
Abstract

An illustrative device includes a transistor including a first set of fins defined above a substrate, a second set of fins defined above the substrate, and a gate structure embedded in the substrate between the first set of fins and the second set of fins, wherein the first set of fins and the second set of fins are doped with a first dopant type and the substrate is doped with a second dopant type different than the first dopant type.

Find Patent Forward Citations

Quick Actions:

Singh, Jagar. (2021). High voltage transistor with fin source/drain regions and trench gate structure (U.S. Patent No. 11127818). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11127818

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