The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Oct. 17, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Arkadiusz Malinowski, Malta, NY (US);
Baofu Zhu, Clifton Park, NY (US);
Frank W. Mont, Troy, NY (US);
Julien Frougier, Albany, NY (US);
Ali Razavieh, Albany, NY (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
One illustrative transistor device disclosed herein includes a gate structure positioned above a semiconductor substrate and first and second overall epitaxial cavities formed in the semiconductor substrate on opposite sides of the gate structure. In one embodiment, each of the first and second overall epitaxial cavities includes a substantially vertically oriented upper epitaxial cavity and a lower epitaxial cavity, wherein the substantially vertically oriented upper epitaxial cavity extends from an upper surface of the semiconductor substrate to the lower epitaxial cavity. A lateral width of the lower epitaxial cavity is greater than a lateral width of the upper epitaxial cavity. The device also includes epitaxial semiconductor material positioned in each of the first and second overall epitaxial cavities.