Albany, NY, United States of America

Ali Razavieh

This inventor holds 19 USPTO granted patents and 3 published patent applications, primarily in Field Effect Transistors. Top assignees: Globalfoundries U.S. Inc., International Business Machines Corporation, Globalfoundries Inc.. Active years: 2018-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ali Razavieh. Retrieved from https://idiyas.com/inventor/ali-razavieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 89.5

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 222(Granted Patents)


Location History:

  • Albany, NY (US) (2018 - 2023)
  • Saratoga Springs, NY (US) (2020 - 2024)

Company Filing History:


Years Active: 2018-2024

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Areas of Expertise:
Field Effect Transistor
Bipolar Junction Transistor
Nanowire
Epitaxial Semiconductor
Steep-Switch
Negative-Capacitance
Air Spacer Structures
Matrix of Nanowires
Two-Dimensional Material
Complementary FETs
Gate Stack
Device Fabrication
19 patents (USPTO):Explore Patents

Title: Innovations of Ali Razavieh: A Pioneer in Semiconductor Technology

Introduction

Ali Razavieh, based in Albany, NY, is a renowned inventor with an impressive portfolio of 19 patents. His work primarily focuses on semiconductor technologies, contributing significantly to the advancement of field effect transistors and bipolar junction transistors. Razavieh’s inventions embody innovative approaches that address key challenges in the semiconductor industry.

Latest Patents

Among his latest innovations is the patent for a "Field effect transistor with vertical nanowire in channel region and bottom spacer between the vertical nanowire and gate dielectric material." This invention details a novel semiconductor structure that incorporates a vertical nanowire channel region, demonstrating cutting-edge methods of manufacture that promise enhanced device performance. Another significant patent is for a "Fin-based lateral bipolar junction transistor with reduced base resistance and method." This structure highlights a fin-based bipolar junction transistor that incorporates semiconductor fins designed for reduced base resistance, ensuring superior operational efficiency.

Career Highlights

Ali Razavieh has made notable contributions while working at prestigious organizations. He has held positions at IBM and Globalfoundries U.S. Inc., where his expertise in semiconductor technologies has led to the development of new products and technologies. His ability to innovate within these companies has greatly impacted the semiconductor field.

Collaborations

Throughout his career, Razavieh has collaborated with industry experts such as Julien Frougier and Ruilong Xie. These partnerships have enabled him to refine his inventions and expand the potential applications of his designs.

Conclusion

Ali Razavieh's contributions to the semiconductor industry through his patents and collaborations underscore his role as a key innovator. Through his work, he continues to push the boundaries of technology, paving the way for future advancements in semiconductor devices. His journey exemplifies the essential link between innovation and practical application, inspiring the next generation of inventors in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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