The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Jan. 03, 2020
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Ruilong Xie, Schenectady, NY (US);
Daniel Chanemougame, Albany, NY (US);
Ali Razavieh, Albany, NY (US);
Kangguo Cheng, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.