The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jul. 19, 2019
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Julien Frougier, Albany, NY (US);
Ali Razavieh, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/823828 (2013.01); H01L 27/0886 (2013.01); H01L 29/1054 (2013.01); H01L 29/1606 (2013.01); H01L 2924/055 (2013.01);
Abstract
Structures for a field-effect transistor and methods of forming structures for a field-effect transistor. A source/drain region is connected with a channel layer, and a gate structure extends across the channel layer. The channel layer is composed of a two-dimensional material.