The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Sep. 27, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Julien Frougier, Albany, NY (US);
Ali Razavieh, Saratoga Springs, NY (US);
Haiting Wang, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4991 (2013.01); H01L 21/30621 (2013.01); H01L 21/76829 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to air spacer structures and methods of manufacture. The structure includes: a plurality of gate structures comprising active regions; contacts extending to the active regions; a plurality of anchor structures between the active regions; and air spacer structures adjacent to the contacts.