The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2018
Filed:
Mar. 09, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Jagar Singh, Clifton Park, NY (US);
Baofu Zhu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 27/0259 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/1008 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to high-voltage, analog bipolar devices and methods of manufacture. The structure includes: a base region formed in a substrate; a collector region formed in the substrate and comprising a deep n-well region and an n-well region; and an emitter region formed in the substrate and comprising a deep n-well region and an n-well region.