The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2018
Filed:
Mar. 21, 2017
Globalfoundries Inc., Grand Cayman, KY;
Jiehui Shu, Ballston Lake, NY (US);
David P. Brunco, Latham, NY (US);
Jinping Liu, Clifton Park, NY (US);
Baofu Zhu, Clifton Park, NY (US);
Shesh Mani Pandey, Saratoga Spring, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A gap fill method for sub-fin doping includes forming semiconductor fin arrays over a semiconductor substrate, forming a first dopant source layer over a first fin array and filling intra fin gaps within the first array, and forming a second dopant source layer over a second fin array and filling intra fin gaps within the second array. The first and second dopant source layers are recessed to expose a channel region of the fins. Thereafter, an annealing step is used to drive dopants from the dopant source layers locally into sub-fin regions of the fins below the channel regions.