David Paul Brunco

USPTO Granted Patents = 30 (Patent Applications = 4)

Average Co-Inventor Count = 2.1

ph-index = 5

Forward Citations = 85(Granted Patents)

Location History:

San Jose, CA (US) (2005)
Hillsboro, OR (US) (2012 - 2014)
Hillsboro, CA (US) (2015)
Tervuren, BE (2009 - 2016)
Malta, NY (US) (2018)
Latham, NY (US) (2016 - 2021)

Company Filing History:

Tokyo Electron Limited

Interuniversitair Microelektronica Centrum (imec)

patents

6. 1 out of 1

Intel Corporation (intel)

patent

7. 1 out of 345

Katholieke Universiteit Leuven

patents

8. 1 out of 1

Globaleoundries U.S. Inc.

patent

9. 1 out of 40,635

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

where one patent can have more than one assignee

Years Active: 2005-2021

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30 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11081398 - Method and structure to provide integrated long channel vertical FinFet device (2021-08-03),

2. 10811422 - Semiconductor recess to epitaxial regions and related integrated circuit structure (2020-10-20),

3. 10727067 - Late gate cut using selective conductor deposition (2020-07-28),

4. 10497703 - Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins (2019-12-03),

5. 10403742 - Field-effect transistors with fins formed by a damascene-like process (2019-09-03),

6. 10347541 - Active gate contacts and method of fabrication thereof (2019-07-09),

7. 10325913 - Method, apparatus, and system having super steep retrograde well with engineered dopant profiles (2019-06-18),

8. 10325811 - Field-effect transistors with fins having independently-dimensioned sections (2019-06-18),

9. 10062612 - Method and system for constructing FINFET devices having a super steep retrograde well (2018-08-28),

10. 10014409 - Method and structure to provide integrated long channel vertical FinFET device (2018-07-03),

11. 10002793 - Sub-fin doping method (2018-06-19),

12. 9953872 - Semiconductor structure with self-aligned wells and multiple channel materials (2018-04-24),

13. 9929159 - Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins (2018-03-27),

14. 9911740 - Method, apparatus, and system having super steep retrograde well with engineered dopant profiles (2018-03-06),

15. 9793168 - Semiconductor structure with self-aligned wells and multiple channel materials (2017-10-17),

Title: Innovator David Paul Brunco: Pioneering Advances in FinFET Technology

Introduction: David Paul Brunco, a prominent inventor based in Latham, NY, has made significant contributions to the field of semiconductor technology with a total of 30 patents to his name. His innovative work focuses primarily on the development of advanced transistor technologies, particularly vertical FinFET devices, which play a crucial role in modern electronic circuits.

Latest Patents: Brunco's recent patents showcase his expertise in semiconductor device manufacturing. One of his notable inventions is a method and structure to provide an integrated long channel vertical FinFET device. This innovation describes a vertical fin field effect transistor that consists of a semiconductor fin over a well region, with a gate conductor extending laterally, effectively increasing the channel length independently of the fin height. Additionally, his work includes techniques for semiconductor recess to epitaxial regions, which involves creating a mask over a substrate to facilitate the formation of cavities within semiconductor regions, ultimately allowing for the enhancement of integrated circuit structures.

Career Highlights: Throughout his career, Brunco has worked with esteemed organizations in the semiconductor industry, including GlobalFoundries Inc. and Imec. His professional journey reflects a commitment to advancing technology and improving performance in semiconductor applications.

Collaborations: Brunco has collaborated with notable professionals in the field, including his coworkers Geert Hellings and Jiehui Shu. These partnerships have likely contributed to the innovative solutions he has developed, further enhancing the capabilities and effectiveness of the technologies he has worked on.

Conclusion: David Paul Brunco's inventive spirit and technical expertise have positioned him as a key figure in semiconductor innovation. With his numerous patents and collaborations, he continues to impact the field significantly, paving the way for future advancements in electronics and integrated circuits.

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4 patents pending:

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