The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2018
Filed:
Sep. 08, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventor:
David P. Brunco, Latham, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/266 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823412 (2013.01); H01L 21/0245 (2013.01); H01L 21/02499 (2013.01); H01L 21/02532 (2013.01); H01L 21/02584 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 29/1054 (2013.01); H01L 29/165 (2013.01); H01L 29/7849 (2013.01);
Abstract
Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation.