The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2019
Filed:
Sep. 22, 2017
Globalfoundries Inc., Grand Cayman, KY;
Wei Zhao, Fort Lee, NJ (US);
Haiting Wang, Clifton Park, NY (US);
David P. Brunco, Latham, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Scott Beasor, Greenwich, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Methods of forming a structure for a fin-type field-effect transistor and structures for a fin-type field-effect transistor. An etch stop layer, a sacrificial layer, and a dielectric layer are arranged in a layer stack formed on a substrate. a plurality of openings are formed that extend through the layer stack to the substrate. A semiconductor material is epitaxially grown inside each of the plurality of openings from the substrate to form a plurality of fins embedded in the layer stack. The sacrificial layer is removed selective to the etch stop layer to reveal a section of each of the plurality of fins.