logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10403742 B1

PDFFull Text
Expired
Date of Patent:
Sep. 03, 2019

Filed:

Sep. 22, 2017

Field-effect transistors with fins formed by a damascene-like process

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Wei Zhao, Fort Lee, NJ (US);

Haiting Wang, Clifton Park, NY (US);

David P. Brunco, Latham, NY (US);

Jiehui Shu, Clifton Park, NY (US);

Shesh Mani Pandey, Saratoga Springs, NY (US);

Jinping Liu, Ballston Lake, NY (US);

Scott Beasor, Greenwich, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:

Thompson Hine LLP

Francois Pagette

Primary Examiner:

Wael M Fahmy

Assistant Examiner:

Sarah K Salerno

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/02664 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/1054 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01);
Abstract

Methods of forming a structure for a fin-type field-effect transistor and structures for a fin-type field-effect transistor. An etch stop layer, a sacrificial layer, and a dielectric layer are arranged in a layer stack formed on a substrate. a plurality of openings are formed that extend through the layer stack to the substrate. A semiconductor material is epitaxially grown inside each of the plurality of openings from the substrate to form a plurality of fins embedded in the layer stack. The sacrificial layer is removed selective to the etch stop layer to reveal a section of each of the plurality of fins.

Find Patent Forward Citations

Zhao, Wei. (2019). Field-effect transistors with fins formed by a damascene-like process (U.S. Patent No. 10403742). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10403742

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…