The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Oct. 26, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/02233 (2013.01); H01L 21/02639 (2013.01); H01L 21/30625 (2013.01); H01L 21/31144 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 21/31116 (2013.01); H01L 21/76224 (2013.01); H01L 29/66545 (2013.01);
Abstract
Methods of forming a structure for a fin-type field-effect transistor and structures for a fin-type field-effect transistor. A plurality of sacrificial layers are formed on a dielectric layer. An opening is formed that includes a first section that extends through the sacrificial layers and a second section that extends through the dielectric layer. A semiconductor material is epitaxially grown inside the opening to form a fin. The first section of the opening has a first width dimension, and the second section of the opening has a second width dimension that is less than the first width dimension.