The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Jun. 25, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Shesh Mani Pandey, Saratoga Springs, NY (US);
Chung Foong Tan, Ballston Spa, NY (US);
Baofu Zhu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0646 (2013.01); H01L 21/76224 (2013.01); H01L 27/1203 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to n-well resistors and methods of manufacture. The structure includes: a substrate composed of a N-well implant region and a deep N-well implant region; and a plurality of shallow trench isolation regions extending into both the N-well implant region and a deep N-well implant region.