The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2020
Filed:
Jun. 25, 2018
Method of forming semiconductor material in trenches having different widths, and related structures
Globalfoundries Inc., Grand Cayman, KY;
Chih-Chiang Chang, Clifton Park, NY (US);
Haifeng Sheng, Rexford, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Haigou Huang, Rexford, NY (US);
Pei Liu, Rexford, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Haiting Wang, Clifton Park, NY (US);
Daniel J. Jaeger, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., GRand Cayman, KY;
Abstract
The present disclosure relates to methods for forming fill materials in trenches having different widths and related structures. A method may include: forming a first fill material in a first and second trench where the second trench has a greater width than the first trench; removing a portion of the first fill material from each trench and forming a second fill material over the first fill material; removing a portion of the first and second fill material within the second trench; and forming a third fill material in the second trench. The structure may include a first fill material in trenches having different widths wherein the upper surfaces of the first fill material in each trench are substantially co-planar. The structure may also include a second fill material on the first fill material in each trench, the second fill material having a substantially equal thickness in each trench.