The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Mar. 12, 2018
Globalfoundries Inc., Grand Cayman, KY;
Jinsheng Gao, Clifton Park, NY (US);
Daniel Jaeger, Saratoga Springs, NY (US);
Michael Aquilino, Gansevoort, NY (US);
Patrick Carpenter, Saratoga Springs, NY (US);
Xusheng Wu, Ballston Lake, NY (US);
Haigou Huang, Rexford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods comprising providing a semiconductor substrate; a fin disposed on the semiconductor substrate; a dummy gate disposed over the fin, wherein the dummy gate has a top at a first height above the substrate; and an interlayer dielectric (ILD) disposed over the fin and adjacent to the dummy gate, wherein the ILD has a top at a second height above the substrate, wherein the second height is below the first height; and capping the ILD with a dielectric cap, wherein the dielectric cap has a top at the first height. Systems configured to implement the methods. Semiconductor devices produced by the methods.