The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Jan. 22, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Haigou Huang, Rexford, NY (US);
Jinsheng Gao, Clifton Park, NY (US);
Hong Yu, Rexford, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Huang Liu, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 21/28 (2006.01); H01L 21/76 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28247 (2013.01); H01L 21/31116 (2013.01); H01L 21/823456 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 21/76834 (2013.01); H01L 21/823431 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to capping structures and methods of manufacture. The structure includes: a plurality of gate structures in a first location with a first density; a plurality of gate structures in a second location with a second density different than the first density; and a T-shaped capping structure protecting the plurality of gate structures in the first location and in the second location.