The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Jan. 29, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jinsheng Gao, Clifton Park, NY (US);

Daniel Jaeger, Saratoga Springs, NY (US);

Chih-Chiang Chang, Clifton Park, NY (US);

Michael Aquilino, Gansevoort, NY (US);

Patrick Carpenter, Saratoga Springs, NY (US);

Junsic Hong, Malta, NY (US);

Mitchell Rutkowski, Ballston Spa, NY (US);

Haigou Huang, Rexford, NY (US);

Huy Cao, Rexford, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 21/28247 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/41775 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.


Find Patent Forward Citations

Loading…