The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Feb. 06, 2018
Globalfoundries Inc., Grand Cayman, KY;
Jinsheng Gao, Clifton Park, NY (US);
Daniel Jaeger, Saratoga Springs, NY (US);
Michael Aquilino, Gansevoort, NY (US);
Patrick Carpenter, Saratoga Springs, NY (US);
Junsic Hong, Malta, NY (US);
Jessica Dechene, Watervliet, NY (US);
Haigou Huang, Rexford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The disclosed methods may include depositing an amorphous carbon layer, a SiCN layer, and a TEOS layer; planarizing the semiconductor structure; performing a non-selective etch to remove the SiCN layer, the TEOS layer, and a portion of the amorphous carbon layer; and performing a selective etch of the amorphous carbon layer. The methods may reduce step height differences between first and second regions of the semiconductor structure.