The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Feb. 06, 2018
Globalfoundries Inc., Grand Cayman, KY;
Jinsheng Gao, Clifton Park, NY (US);
Daniel Jaeger, Saratoga Springs, NY (US);
Michael Aquilino, Gansevoort, NY (US);
Patrick Carpenter, Saratoga Springs, NY (US);
Jessica Dechene, Watervliet, NY (US);
Huy Cao, Rexford, NY (US);
Mitchell Rutkowski, Ballston Spa, NY (US);
Haigou Huang, Rexford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system disclosed herein involves forming trench silicide region contact. A plurality of fins are formed on a semiconductor substrate. An epitaxial (EPI) feature is formed at a top portion of each fin of the first portion over a first portion of the fins. A gate region is formed over a second portion of the fins. A replacement metal gate (RMG) process is performed in the gate region. A trench is formed in a portion of the gate region. A void is formed adjacent the a portion of the gate region. A first silicon feature is formed in the trench. A second silicon feature is formed in the void. A TS cut region is formed over the trench. The first silicon feature and the second silicon feature are removed. A metallization process is performed in the void to form a contact.