The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Sep. 26, 2017
Globalfoundries Inc., Grand Cayman, KY;
Hui Zang, Guilderland, NY (US);
Daniel Jaeger, Saratoga Springs, NY (US);
Haigou Huang, Rexford, NY (US);
Veeraraghavan Basker, Albany, NY (US);
Christopher Nassar, Ballston Spa, NY (US);
Jinsheng Gao, Clifton Park, NY (US);
Michael Aquilino, Gansevoort, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system disclosed herein involves forming trench in a gate region, wherein the trench having an oxide layer to a height to reduce or prevent process residue. A plurality of fins are formed on a semiconductor substrate. Over a first portion of the fins, an epitaxial (EPI) feature at a top portion of each fin of the first portion. Over a second portion of the fins, a gate region is formed. In a portion of the gate region, a trench is formed. A first oxide layer at a bottom region of the trench is formed. Prior to performing an amorphous-silicon (a-Si) deposition, a flowable oxide material is deposited into the trench for forming a second oxide layer. The second oxide layer comprises the flowable oxide and the first oxide layer. The second oxide layer has a first height.