The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Sep. 12, 2017
Globalfoundries Inc., Grand Cayman, KY;
Xusheng Wu, Ballston Lake, NY (US);
Hong Yu, Rexford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
At least one method, apparatus and system disclosed herein involves forming a sigma shaped source/drain lattice. A fin is formed on a semiconductor substrate. A gate region is formed over the fin. In a source region and a drain region adjacent bottom portions of the fin, a first recess cavity is formed in the source region, and a second recess cavity is formed in the drain region. The first and second recess cavities comprise sidewalls formed in an angle relative to a vertical axis. Portions of the first and second recess cavities extend below the fin. In the first recess cavity, a first rare earth oxide layer is formed, and in the second recess cavity, a second rare earth oxide layer is formed.