The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Oct. 17, 2017
Globalfoundries Inc., Grand Cayman, KY;
Chun Yu Wong, Ballston Lake, NY (US);
Hui Zang, Guilderland, NY (US);
Xusheng Wu, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to fin structures with single diffusion break facet improvement using an epitaxial insulator and methods of manufacture. The structure includes: a plurality of fin structures; an insulator material filling a cut between adjacent fin structures of the plurality of fin structures; a metal material (e.g., rare earth oxide or SrTiO) at least partially lining the cut; and an epitaxial source region or epitaxial drain region in at least one of the plurality of fin structures and adjacent to the metal material.