The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Jun. 07, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/76805 (2013.01); H01L 21/76859 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 23/535 (2013.01); H01L 23/53257 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01);
Abstract
A method may include providing a device structure in the semiconductor device. The device structure may include a buried device contact, a first dielectric layer, disposed over the buried device contact; and a device element, where the device element includes a TiN layer. The method may include implanting an ion species into the TiN layer, wherein the ion species comprises a seed material for selective tungsten deposition.