Wei Zou

This inventor holds 22 USPTO granted patents and 6 published patent applications, primarily in Ion Implantation Technology. Top assignee: Applied Materials, Inc.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Zou. Retrieved from https://idiyas.com/inventor/wei-zou-4qzz2wta

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 (Patent Applications = 6)

% Patents Active = 95.5

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 1(Granted Patents)

Location History:

Gloucester, MA (US) (2023)
Lexington, MA (US) (2022 - 2024)

Company Filing History:

22 out of 14,482

Applied Materials, Inc.

patents

Years Active: 2022-2026

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Areas of Expertise:

Ion Implantation

MOSFET

Photonics

Dopant Activation

Buried Layer

Nanosheet

Stress Formation

Photoresist Etch

Selective Implantation

Trench Formation

ETSOI

Silicon Carbide

22 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12578531 - Surface roughness reduction for photonics using high-temperature implantation (2026-03-17),

2. 12424482 - Selective implantation into STI of ETSOI device (2025-09-23),

3. 12381088 - Method for precision oxidation control by ion implantation (2025-08-05),

4. 12308237 - Ion implantation to increase MOSFET threshold voltage (2025-05-20),

5. 12247283 - Method and apparatus for controlled ion implantation (2025-03-11),

6. 12087585 - Low-temperature implant for buried layer formation (2024-09-10),

7. 12046473 - Backside wafer dopant activation (2024-07-23),

8. 11955533 - Ion implantation to reduce nanosheet gate length variation (2024-04-09),

9. 11948799 - Minority carrier lifetime reduction for SiC IGBT devices (2024-04-02),

10. 11881405 - Methods for forming N-type buried layer in a substrate by performing non-doping implant through oxide layer formed over the substrate (2024-01-23),

11. 11804537 - Channeled implants for SiC MOSFET fabrication (2023-10-31),

12. 11728383 - Localized stressor formation by ion implantation (2023-08-15),

13. 11728214 - Techniques for selective tungsten contact formation on semiconductor device elements (2023-08-15),

14. 11721743 - Implantation enabled precisely controlled source and drain etch depth (2023-08-08),

15. 11699570 - System and method for hi-precision ion implantation (2023-07-11),

Title: The Innovative Journey of Wei Zou

Introduction: Wei Zou, a talented inventor based in Lexington, MA (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Wei Zou holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, Wei Zou has had a successful career marked by his ability to turn creative ideas into tangible solutions. His work has not only revolutionized industries but has also inspired future generations of inventors.

Collaborations: Throughout his career, Wei Zou has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to market. His collaborative spirit and dedication to innovation have led to numerous successful projects and products.

Conclusion: Wei Zou's innovative spirit, coupled with his determination to push the boundaries of technology, has solidified his position as a respected inventor in the industry. His contributions continue to shape the future of innovation, making him a true pioneer in his field.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

6 patents pending: