The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2024
Filed:
Jun. 25, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Qintao Zhang, Mt Kisco, NY (US);
Samphy Hong, Saratoga Springs, NY (US);
Vittoriano Ruscio, Ballston Spa, NY (US);
Wei Zou, Lexington, MA (US);
David J. Lee, Poughkeepsie, NY (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed herein are methods for backside wafer dopant activation using a low-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a low-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.